reverse voltage 90 to 100v forward current 2.0a maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol ss2h9 SS2H10 unit device marking code ms9 ms10 maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at: t l = 130 ci f(av) 2.0 a peak forward surge current 8.3ms single half sine-wave i fsm 75 a superimposed on rated load (jedec method) peak repetitive reverse surge current at t p = 2.0 s, 1kh z i rrm 1.0 a critical rate of rise of reverse voltage dv/dt 10,000 v/ s maximum thermal resistance junction to lead t l = 25 cr jl 25 c/w operating junction and storage temperature range t j , t stg 65 to +175 c electrical characteristics (t a = 25 c unless otherwise noted) maximum instantaneous i f = 2.0a, t j = 25 c v f 0.79 v forward voltage at (note 1): i f = 2.0a, t j = 125 c 0.65 maximum dc reverse current t j = 25 c i r 10 a at rated dc blocking voltage (note 1) t j = 125 c4ma note: (1) pulse test: 300 s pulse width, 1% duty cycle features plastic package has underwriters laboratory flammability classification 94v-0 low profile surface mount package built-in strain relief low power loss, high efficiency for use in low voltage high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 250 c/10 seconds at terminals mechanical data case: jedec do-214aa molded plastic body terminals: solder plated, solderable per mil-std750, method 2026 polarity: color band denotes cathode end weight: 0.003oz., 0.093g 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band dimensions in inches and (millimeters) do-214aa (smb) 0.106 max (2.69 max) 0.050 min (1.27 min) 0.220 ref 0.083 min (2.10 min) mounting pad layout new product high voltage surface mount schottky barrier rectifiers ss2h9 and SS2H10 vishay semiconductors formerly general semiconductor document number 88750 www.vishay.com 25-jun-02 1
0 3.0 4.0 0 20 40 60 80 100 120 140 average forward current (a) lead temperature ( c) 2.0 1.0 fig. 1 ?forward current derating curve 160 0.2 0 0.4 0.8 1.0 fig. 2 ?typical instantaneous forward characteristics 20 60 40 100 80 fig. 3 ?typical reverse characteristics instantaneous reverse current ( a) percent of rated peak reverse voltage (%) 0.01 0.1 10 1 instantaneous forward current (a) t j = 25 c reverse voltage (v) junction capacitance (pf) 0.1 1 10 100 100 1000 10 0.1 0.01 1 10000 100 t j = 100 c fig. 4 ?typical junction capacitance t j = 25 c t j = 125 c instantaneous forward voltage (v) t, pulse duration (sec.) transient thermal impedance ( c/w) 0.1 0.01 1 10 100 10 1 fig. 5 ?typical transient thermal impedance 1.2 0.1 t j = 150 c 0.6 1.4 100 t j = 175 c t j = 100 c t j = 125 c 10 1000 t j = 150 c 10000 ratings and characteristic curves (t a = 25 c unless otherwise noted) ss2h9 and SS2H10 vishay semiconductors formerly general semiconductor www.vishay.com document number 88750 2 25-jun-02
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